Compliance-Free ZrO2/ZrO2 − x /ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour
نویسندگان
چکیده
منابع مشابه
Compliance-Free ZrO2/ZrO2 − x/ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour
A controllable transformation from interfacial to filamentary switching mode is presented on a ZrO2/ZrO2 - x /ZrO2 tri-layer resistive memory. The two switching modes are investigated with possible switching and transformation mechanisms proposed. Resistivity modulation of the ZrO2 - x layer is proposed to be responsible for the switching in the interfacial switching mode through injecting/retr...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2017
ISSN: 1931-7573,1556-276X
DOI: 10.1186/s11671-017-2155-0